Ultralow Absorption in Silicon Carbide in the Millimeter-Wave Range

Recently, a university held a lecture on the ultra-low absorption characteristics of silicon carbide in the millimeter wave range, and the speaker discussed the potential of SiC in high-frequency applications.

Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, with excellent physical, chemical, and electrical properties. Silicon carbide has broad application prospects in the fields of high frequency and radio frequency (RF) due to its unique physical and electronic properties. The application of SiC in millimeter wave radar is particularly important because these systems need to operate at extremely high frequencies while maintaining low signal loss. With the development of 5G networks, SiC, as the basic material for high-frequency components, can provide efficient and reliable high-frequency performance in base stations and mobile devices.

silicon carbide

SiC exhibits ultra-low absorption characteristics in the millimeter wave range

High frequency performance

Wide bandgap: SiC is a wide bandgap semiconductor material, which means it can support high-frequency operation. The wide bandgap characteristics allow SiC devices to maintain low losses when operating at high frequencies.

Low loss

Low dielectric constant: SiC has a relatively low dielectric constant, which helps reduce signal attenuation when passing through the material.

Low dielectric loss: SiC has low dielectric loss, especially in the millimeter wave frequency range, indicating that the material can transmit high-frequency signals well without excessive energy loss.

Temperature stability

High thermal conductivity: SiC has a high thermal conductivity, which helps to dissipate heat during high-frequency operation, thereby maintaining the temperature stability of the material.

Low temperature coefficient: The dielectric constant of SiC varies less with temperature, which means its performance is more consistent at different temperatures.

Structural integrity

Lattice structure: The crystal structure of SiC contributes to its stability and durability at high frequencies, maintaining good performance even under harsh operating conditions.

High power density

High saturation electron drift velocity: Electrons in SiC can move at higher speeds, which helps improve the power density of the device and make it more suitable for high-frequency and high-power applications.

Supplier of Silicon carbide

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