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High Purity Indium Oxide In2O3 Powder CAS 1312-43-2, 99.9% ,

Description of Indium Oxide In2O3 powder:

Indium oxide This is an amphoteric oxygen of indium. The molecular formula for it is In2O3. It is either a light yellow or white amorphous product, heated to make it redder-brown. Indium oxide: A new, transparent n-type semiconductor functional material with a width-disabled bandwidth, smaller resistivity, and greater catalytic activity. This material has been extensively used in optical fields, gas sensors, and catalysts. There are also functions such as the indium oxide particle sizes, surface effect and small dimensional effects, macro quantum tunnel effect, and quantum dimensional effect.

Indium oxide This is a low-cost, oxidized oxide that has been dissolved in hydrogen. High temperatures are required to separate the low-level oxygen. Additionally, the low-level oxide can be separated at high temperatures by reacting with the metal indium, which is solubilized and acid. The more complicated it becomes, the faster the water absorption disappears. The production of metal indium occurs when hydrogen can be reduced through heating with hydrogen.

Indium oxide Crystallized oxides cannot be dissolved in water but are insoluble in it. Two phases of the crystals can be divided: diamond type (corundum) and cubic (diamond). There is a 3eV bandgap in between the phases. You can find the information box that lists the parameters of each cubic phase. Rhombic phases are produced at high temperatures. They are produced by a non-balanced growing method. It belongs to the R3C number. Piersson symbol HR30, A= 0.5487 (nm), b= 0.5487 (nm), C= 0.57818(nm), z = 6; the calculation density is 7.31 grams/cm3.

A magnetic semiconductor is indium mixed with indium film. It has a one-phase crystal structure. The material in the spinning electronics can include it.

Films made of indium oxide polycrystalline Zn doped with Zn have high conductivity (conductivity of 105 S/m), even when superconductivity is higher at temperatures in Helium. The doping process and the structure of the film are responsible for the superconducting transition Tc. It is less than 3.3k


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Indium Oxide In2O3 Pulp Performance: Heating to 400 500 in the presence of hydrogen or another reducing agent can lead to the formation of metal indium and low-cost Indium oxide.

At high temperatures, it can decompose to lower oxides. At high temperatures, In2O3 can react with indium metal. While In2O3 from low-temperature combustion is readily soluble in acids, more extensive high-temperature treatments make it more difficult to dissolve and cause a loss of hygroscopicity. Indium trioxide can be reduced to hydrogen by red heat. This is how metal indium is created.


Technical Parameters of Indium Oxide Powder In2O3:
ITEM SPECIFICATIONS TEST RESULT
Appearance Light yellowish powder Powder with light yellowish color
In2O3(%,Min) 99.99 99.995
Impurities(%,Max)
Cu 0.8
Pb 2.0
Zn 0.5
Cd 1.0
Fe 3.0
Tl 1.0
Sn 3.0
As 0.3
Al 0.5
Mg 0.5
Ti 1.0
Sb 0.1
Co 0.1
K 0.3
Other Index
Particle Size (D50) 3-5mm

Production Method of Indium Oxide In2O3 Powder:

Direct oxidation process

The direct oxidation process is a method of obtaining indium oxide by directly oxidizing indium metal. The process uses metal indium as raw material to carry out direct oxidation reactions in oxygen or air. The specific process is as follows: the metal indium is mixed with oxygen or air, and the oxidation reaction is carried out at a certain temperature to generate indium oxide. The direct oxidation method has the advantages of a simple process and low cost. Still, it also has some disadvantages, such as low product purity and easy to produce a lot of dust.

Tin salt method

The tin salt process is a method to obtain indium oxide by reacting tin salt with an oxidizing agent. The process takes tin salts (such as tin sulfate, tin nitrate, etc.) as raw materials and reacts with oxidants (such as hydrogen peroxide, potassium permanganate, etc.) to produce indium oxide. The specific process is as follows: the tin salt is mixed with the oxidizer, and the reaction is carried out at a certain temperature to produce indium oxide. The tin salt method has the advantages of high purity and uniform particle size, but it also has some disadvantages, such as higher cost and higher requirements for equipment.

Solvent method

The solvent process is a method of obtaining indium oxide by solvent extraction. The method uses indium-containing solution (such as indium chloride, indium sulfate, etc.) as raw material and obtains indium oxide by solvent extraction. The specific process is as follows: the indium-containing solution is mixed with the organic solvent, and the extraction reaction is carried out at a certain temperature to obtain the organic phase of indium oxide. The indium oxide in the organic phase is then separated by distillation and other means. The solvent method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as higher cost and higher requirements for equipment.

Electrolytic method

Electrolysis is a method of obtaining indium oxide by electrolysis of indium-containing solution. The method takes an indium-containing solution (such as indium chloride, indium sulfate, etc.) as raw material, reduces indium ions in the solution into indium metal through the electrolytic process, and then converts indium metal into indium oxide through an oxidation reaction. The specific process is as follows: the indium-containing solution is mixed with the electrolyte, and the electrolytic reaction is carried out in the electrolytic cell to obtain the metal indium. Then, the metal indium is mixed with oxygen or air and oxidized at a certain temperature to produce indium oxide. The electrolysis method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as high cost and high equipment requirements.

Chemical vapor deposition

Chemical vapor deposition is a method of obtaining indium oxide by chemical vapor deposition. The process uses metal indium or its compounds as raw materials and reacts with oxygen or air at high temperatures to generate indium oxide steam. Solid particles of indium oxide are then obtained by cooling and condensation. The chemical vapor deposition method has the advantages of high product purity and uniform particle size, but it also has some disadvantages, such as high cost and high equipment requirements.


Application of Indium Oxide In2O3 Powder:

Electronic device

Indium oxide, as an excellent semiconductor material, is widely used in the field of electronic devices. In electronic devices, indium oxide can be used as a semiconductor material for field-effect transistors, diodes, and other devices, which have the advantages of high sensitivity and low power consumption. In addition, indium oxide can also be used to manufacture integrated circuits and microelectronic devices.

Optical material

Indium oxide has high transparency and good optical properties and is widely used in the field of optical materials. In optical materials, indium oxide can be used to manufacture optical lenses, mirrors, and other optical components to improve the performance and accuracy of optical components. In addition, indium oxide can also be used to manufacture optical communication devices such as optical fiber and optical fiber connectors.

Solar cell

Indium oxide, as a kind of wide-bandgap semiconductor material, has high transparency and good photoelectric performance and is widely used in the field of solar cells. In solar cells, indium oxide can be used as a window material and a back electrode material to improve the photoelectric conversion efficiency and stability of the battery. In addition, indium oxide can also be used to manufacture dye sensitizers and photocatalysts for solar cells.

Gas sensitive material

Indium oxide has high chemical stability and gas-sensitive properties and is widely used in the field of gas-sensitive materials. In gas-sensitive materials, indium oxide can be used to detect trace substances in gases, such as hydrogen, carbon monoxide, carbon dioxide, etc. In addition, indium oxide can also be used to manufacture high-temperature gas-sensitive materials and optical gas-sensitive materials.

Catalyst support

Indium oxide has a high specific surface area and good chemical stability and is widely used in the field of catalyst support. In addition, indium oxide can also be used to manufacture heterogeneous catalysts and photocatalysts.

Biomedical materials

Indium oxide has excellent biocompatibility and chemical stability and is widely used in the field of biomedical materials. In biomedical materials, indium oxide can be used to manufacture drug carriers and drug sustained-release agents, etc., to improve the effect and safety of drug therapy. In addition, indium oxide can also be used to manufacture biomedical devices such as biosensors and biochips.


Indium Oxide In2O3 powder Storage:
Indium Oxide In2O3 powder should be kept in a dry, cool, and sealed environment.
Shipping and Packing of Indium Oxide Powder In2O3:
You can pack it in two plastic bags with the inside.
Packing of indium oxide In2O3 powder, vacuum packaging, 100g to 500g or 1kg/bag at 25kg/barrel. Or as you request.
Shipping of Indium Oxide in2O3 Powder: can ship by sea, air or express, once the payment has been received.

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Indium Oxide In2O3 Powder Properties

Other Titles Indium Oxide, Indium(3+) oxide, India, Indium trioxide, Indium sesquioxide,
Oxo-oxoindianyloxyindigane, Indium(3+); oxygen(2-), Diindium trioxide.
1312-43-2
Compound Formula In2O3
Molecular Weight 277.64
Appearance Powdered Yellow
Melting Point 1,910deg C (3,470deg F)
Solubility In Water N/A
Density 7.18 g/cm3
Purity 99.90%
Particle Size granule, -
Boling Point N/A
Specific Heat N/A
Thermo Conductivity N/A
Thermal Expansion N/A
Young’s Module N/A
Exact 277.793 g/mol
Monoisotopic 277.793 Da

Safety & Health Information

Safety Notice N/A
Hazard Statements N/A
Flashing Point N/A
Hazard Codes N/A
Risk Codes N/A
Safety statements N/A
RTECS # NL1770000
Transport Information n
WGK Germany 3

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